With the growth of IT industry, a large variety of new materials just like the bamboo shoot in spring come out overnight after a sweet rain. Now the semiconductor material has rapidly developed and become the foundation of IT industry that could never subsist without the support of semiconductor material which is acted as a bridge over the two sides of human being and the information super highway and also is a bond linking us with the modern life. As one of major semiconductor materials, silicon wafer has been widely used in the field of telecommunication, science research, manufacture and common life, etc. In recent years, the demand in the international market for the silicon wafer has been dramatically swelled, so the manufacturer has rack their brain to speed up the technological innovation and schemed to expand the production scale so that the silicon wafer they produced have gone through a continual improvement of quality. In order to meet the requirement of developing of IT industry and meanwhile maintain a increasing share of the market under the tense competition, now, the manufacturers are forwarding to increase the diameter of the wafer and also try to minimize the harmful particles and defects on the wafer to assure their customers of a high-quality product.

         Asia is the major base of manufacturing of semiconductor materials in the world and has the most advanced related techniques and product line. Sino surplus as a member in this field is able to provide you with the semiconductor materials of high-level quality and also can assure you of a reliable and prompt service to your full satisfaction.

         Silicon is the material that the majority of the semiconductors and microchips are built on. Ironically, silicon by itself doesn't conduct electricity very well. However it can take on the dopants precisely in order to control the resistivity to an exact specification. The most common dopants are boron, phosphorus, arsenic, and antimony. Depending on which dopant is used, silicon wafer are classified into a P or N type (Boron: P type; phosphorus, Arsenic, Antimony: N type). When the monocystaline silicon ingot is made through the method of CZ or FZ and then go through a consecutive process of slicing, edge grinding, lapping, etching, polishing, and cleaning, the finished silicon wafer is firmed and accordingly called slice wafer, etch wafer, polish wafer, or Fz wafer, etc. now Sino surplus can supply all kinds of silicon wafer and GaAs wafer for all diameters ranging from ? 1.5 ? - ? 12 ? in accordance with the customers' requirement.

Monocrystalline silicon ingot

Type/Dopant : P/Boron; N/phosphorus

Orientation : {100} /{111}/ {110}

Diameter : 1.5" - 12"

Resistivity : 10 - 3 - 80O.cm

Radial resistivity variation: No

Minority carrier Lifetime: = 10 ?s

Defect: None

Note: other specification depends on the customers' requirement

Cutting and grinded wafer

Diameter : F 1.5 " - F 12 "

TTV: <5 ?m

GTIR: < 3 ?m

Bow/Warp: <20 ?m

Note: other specification depends on the customers' requirement

200mm polish silicon wafer

Growth Method : Cz

Diameter : 200 ± 0.2 mm

Type/Dopant : P/Boron; N/phosphorus

Orientation : {100} /{111}

Resistivity : 0.003-50ohm.cm

Radial resistivity variation: P type < 5%

N type < 15%

Metals : < 5xE10

Metal of surface: Copper, Chromium, Iron, Nickel = 2.5 xE10

Aluminum, zinc, Calcium, Sodium = 1.0 xE11

Oxygen concentration: (5.0-7.8) x E17 ± 0.5

Radial Oxygen variation: 5%MAX

Carbon concentration: = 2.0 x E17

Thickness : follow SEMI standard or customers' requirement

TTV : < 3 ?m

GTIR: < 2.0 ?m

Site Flatness (STIR) : < 0.3 ?m

Bow/Warp : < 20 ?m

Particle Count : <30@>0.15 ?m

150mm silicon wafer

Growth method: CZ

Diameter(tolerance): 150.0 ± 0.2mm

Thickness: follow SEMI standard or customers' requirement

Type/dopant: P/Boron ; N/phosphorus

Orientation: <100>/<111>

Resistivity: 0.003-50ohm.cm

Radial resisitivity variation: P type < 6%

N type < 25%

Oxygen concentration: 5.0-7.8 x E17 ± 0.5

Radial Oxygen variation: < 5%

Carbon concentration: = 2.0 x E16

Metals: = 1.0 xE11

Metal of surface: Copper, Chromium, Iron, Nickel = 5 xE10

Aluminum, Zinc, Sodium, Calcium = 2.0 xE11

TTV: < 2.5 ?m

GTIR: <1.2 ?m

STIR: < 0.3 ?m

Bow/Warp: < 30 ?m

Particle Count : <30@>0.2 ?m

Note: above parameters depend on the customers' requirement

Polycrystalline silicon rod

The diameter: 40-200mm

Diameter tolerance: = 10%

Donor: > 3000 O . ?

Acceptor: > 300 O . ?

Carbon content: 2xE16at/?3

Note: above parameters depend on the customers' requirement.

Silicon powder

Purity:99.999%

Particle size: not above 600 mesh.

Note: other specification is available upon request.

Semi-insulating GaAs wafer

Diameter: 2 ? ?6 ?

Dopant: non-dopant / Cr

Orientation: <100>/<111>

Maching: sliced or polished wafer are available on request

Low-resistivity GaAs wafer

Diameter: 2 ? or 3 ?

Dopant: Si/Cr

Orient: <100>/<111>

Machining: sliced and polished wafers are available on request.

Note: other specification is available upon request.